| Specification | Details |
|---|---|
| Capacity | 512 GB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen3 ×4, NVMe 1.3 |
| NAND Flash | 3D NAND |
| Controller / ECC | LDPC ECC support |
| Sequential Read Speed | ~2,000 MB/s |
| Sequential Write Speed | ~1,600 MB/s |
| 4K Random Read IOPS | ~99,500 IOPS |
| 4K Random Write IOPS | ~96,200 IOPS |
| MTBF (Mean Time Between Failures) | 1,500,000 hours |
| Terabytes Written (TBW) | 256 TB |
| Operating Temperature | 0 °C – 70 °C |
| Storage Temperature | –40 °C – 95 °C |
| Shock Resistance | 1,500 G / 0.5 ms |
| Vibration Resistance | 10 – 200 Hz, 0.5 G |
| Power Consumption | Max ~3,521 mW, Idle ~1,188 mW |
| Dimensions (L × W × H) | 80 mm × 22 mm × 2.25 mm |
| Weight | ~8 g |
| Features | TRIM, S.M.A.R.T, Garbage Collection |