| Specification | Details |
|---|---|
| Model / Part Number | MZ‑76E500BW |
| Storage Capacity | 500 GB |
| Form Factor | 2.5‑inch (7 mm) |
| Interface | SATA III (6 Gb/s) |
| NAND Type | Samsung V‑NAND, 3‑bit MLC (TLC) |
| Controller | Samsung MJX controller |
| DRAM Cache | 512 MB LPDDR4 |
| Sequential Read Speed | Up to 560 MB/s |
| Sequential Write Speed | Up to 520 MB/s |
| Random (4K) Read IOPS | Approximately 98,000 |
| Random (4K) Write IOPS | Approximately 90,000 |
| Endurance (Total Bytes Written) | 300 TBW |
| Mean Time Between Failures (MTBF) | 1,500,000 hours |
| Encryption | AES‑256, TCG/Opal, IEEE 1667 support |
| Operating Temperature Range | 0°C – 70°C |
| Non‑Operating (Storage) Temperature | –45°C – 85°C |
| Power Consumption | Typical: ~2.2 W, Burst: up to ~4.0 W, DevSleep: ~2 mW |
| Physical Dimensions | 100 mm × 69.85 mm × 6.8 mm |
| Weight | ~50 g |