| Specification | Details |
|---|---|
| Model / Part Number | MZ‑V6E250BW |
| Capacity | 250 GB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen 3.0 ×4, NVMe |
| Controller | Samsung Polaris Controller |
| NAND Flash | 48-layer 3D TLC V‑NAND |
| DRAM Cache | 512 MB |
| Sequential Read Speed | Up to ~3,200 MB/s |
| Sequential Write Speed | Up to ~1,500 MB/s (with TurboWrite) |
| Random Read (4K, QD32) | ~330,000 IOPS |
| Random Write (4K, QD32) | ~300,000 IOPS |
| Endurance (TBW) | 100 TBW for 250 GB |
| Power Consumption | ~5.13 W active, very low idle / DevSleep |
| Operating Temperature | 0 °C – 70 °C |
| Non‑Operating Temperature | –45 °C – 85 °C |
| Dimensions | 80.15 mm × 22.15 mm × 2.38 mm |
| Weight | ~7.7 g |
| Features | Intelligent TurboWrite, Dynamic Thermal Guard, Samsung Magician software |